Abrasives Silicon Carbide Hmoov
Dub Silicon Carbide (SiC) yog ib qho nyuaj heev (Mohs 9.1 / 2550 Knoop) txiv neej ua cov ntxhia uas muaj cov thermal conductivity thiab siab zog ntawm qhov kub siab (ntawm 1000 degree, SiC yog 7.5 npaug zog dua Al203). SiC muaj qhov hloov pauv ntawm elasticity ntawm 410 GPa, tsis muaj qhov txo qis ntawm lub zog mus txog 1600 degree, thiab nws tsis yaj ntawm ib txwm muaj zog tab sis hloov pauv ntawm 2600 degree.
Hauj lwm lawm
Kev piav qhia
Silicon carbide hmoov yog cov khoom sib xyaw ua ke ntawm silicon thiab carbon atoms. Nws muaj cov tshuaj formula SiC thiab yog cov khoom siv tawv thiab muaj zog nrog cov thermal conductivity thiab cov tshuaj tiv thaiv zoo heev. Silicon carbide hmoov feem ntau yog siv rau hauv abrasive thiab txiav daim ntaub ntawv vim nws hardness thiab durability, nrog rau hauv electronics thiab semiconductor industries vim nws high thermal conductivity thiab high-temperature stability. Nws kuj yog siv los ua cov khoom siv refractory thiab hauv kev tsim cov ntaub ntawv ceramic. Silicon carbide hmoov muaj nyob rau hauv cov qib sib txawv thiab qhov ntau thiab tsawg nyob ntawm daim ntawv thov.
Specification
Hmoov zoo: 0 5 - 10 microns
Cov hmoov nruab nrab: 10 - 50 microns
Coarse Hmoov: 50 - 500 microns
Purity:
High Purity: 99.9% lossis siab dua
Standard Purity: 98.5 feem pua - 99.5 feem pua
Daim ntawv thov:
Abrasive cov ntaub ntawv
Cov khoom siv refractory
Kev siv cov semiconductor
Cov khoom siv hluav taws xob
High-temperature cua sov ntsiab
Ceramics manufacturing
Hlau ntau lawm
Cim npe nrov: abrasives silicon carbide hmoov
Xa kev nug
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